| 摘要 |
PURPOSE:To enhance surface hardness and resistance to environmental conditions, and to improve repetition electrostatic chargeability characteristics by forming a specified amorphous silicon carbide hydride contg. a specified amt. of B on the surface of a photoconductor layer composed essentially of Si or Ge. CONSTITUTION:Amorphous silicon carbide hydride (a-SiCx:H) contg. 5-1,000ppm B and C in a number x of 0.1-1 is formed on the surface of a photoconductor layer 3 composed essentially of Si or Ge. Said a-SiCx:H is formed in a layer thickness of 10-10,000nm, and contains at least one of O, N, S, and F in an amt. of 0.01-30atom%. Such a-SiCx:H is used to form a protective layer 4 on the photoconductor layer 3. As a result, surface strength is raised, environment resistance is improved, and further, repetition chargeability characteristics can be enhanced. |
