Temperature compensated magnetoresistive effect thin film magnetic sensor

摘要

A magnetoresistive effect thin film magnetic sensor has a temperature compensating magnetoresistive effect (MR) element arranged non-parallel to a signal detecting MR element to prevent the temperature compensating MR element from being influenced by an external magnetic signal field. Alternatively, it has an L-shaped temperature compensating MR element arranged closely to the signal detecting MR element to prevent the temperature compensating MR element from being influenced by the external magnetic signal field. It further has a magnet member arranged closely to or in contact with the temperature compensating MR element to enhance a positional precision of the temperature compensation and reduce a time lag.