发明名称 |
Method of fabricating a semiconductor device utilizing simultaneous outdiffusion and epitaxial deposition |
摘要 |
A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.
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申请公布号 |
US4505766(A) |
申请公布日期 |
1985.03.19 |
申请号 |
US19830491543 |
申请日期 |
1983.05.04 |
申请人 |
HITACHI, LTD.;HITACHI MICROCOMPUTER ENGINEERING, LTD. |
发明人 |
NAGUMO, SHUZO;OGURA, SETSUO;KITAMURA, YUKINORI |
分类号 |
H01L27/04;H01L21/22;H01L21/331;H01L21/74;H01L21/822;H01L21/8222;H01L27/02;H01L27/06;H01L27/08;H01L29/73;H01L29/93;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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