发明名称 MASK PROGRAMMABLE READ-ONLY MEMORY STACKED ABOVE A SEMICONDUCTOR SUBSTRATE
摘要 <p>MASK PROGRAMMABLE READ-ONLY MEMORY STACKED ABOVE A SEMICONDUCTOR SUBSTRATE In the disclosed read-only memory, address decode means for addressing information in the memory lie in a semiconductor substrate; an insulating layer covers the address decode means; an array of spaced-apart metal lines and semiconductor lines lies on the insulating layer over the address decode means; outputs from the address decode means respectively couple through the insulating layer to the metal lines and to the semiconductor lines; and a plurality of mask selectable electrical contacts between the metal lines and semiconductor lines forms a matrix of mask selectable diodes over the insulating layer representative of the information in the memory.</p>
申请公布号 CA1184300(A) 申请公布日期 1985.03.19
申请号 CA19820394952 申请日期 1982.01.26
申请人 BURROUGHS CORPORATION 发明人 ROESNER, BRUCE B.
分类号 G11C17/06;G11C17/08;H01L21/8229;H01L27/102;H01L29/47;H01L29/872;(IPC1-7):G11C17/00 主分类号 G11C17/06
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