| 摘要 |
PURPOSE:To prevent formation of a melt trace on the surface of a thin film owing to arc discharge in the stage of forming the thin film consisting of a metal or metallic compd. on the surface of a material to be treated with a plasma CVD device by adjusting a DC plasma power source to the DC voltage which is switched at a high speed. CONSTITUTION:Materials 5 to be treated are placed or a holder 4 in a hermetic vessel and the inside of the vessel is evacuated to a vacuum by a vacuum pump 3; at the same time, a gas such as N2, H2, gaseous halogen compd., gaseous fluoride, etc. is supplied into the vessel from a gas source 9. Plasma discharge is generated with the vessel 1 as an anode and the materials 5 as a cathode to form the thin film of the nitride of the above-mentioned metal or other desired compd. on the surface of the materials to be treated by the above-mentioned gas. A switching transistor 12 is connected into a DC circuit full-wave rectified from AC by a current rectifier 11 as a power source to form the current having 50Hz- several kHz frequency and a variable on-off ratio and voltage. Said current is increased to a high voltage by a boosting transformer 10. Such voltage is impressed to the vessel 1 and the materials 5. There is not generation of the arc discharge during flow discharge and the generation of a melt trace in the thin film formed by such discharge is prevented. |
