| 摘要 |
PURPOSE:To form stably a thin film having high quality with good reproducibility in the stage of forming a thin compd. film on a substrate by a vapor deposition method using plasma by controlling respectively separately the activity of gaseous raw materials. CONSTITUTION:The inside of a chamber 1 is evacuated to a vacuum, then a stage 2 on which a substrate 3 is placed is rotated and the substrate 3 is heated. Gaseous raw materials for forming a thin film are supplied from nozzles 4, 4', 4'' at the same instant. High frequency coils 5, 5', 5'' and capillaries 6, 6', 6'' for sampling are preliminarily attached to the respective nozzles. The gaseous raw materials emitted from the nozzles are activated by the plasma in the nozzles by the high frequency coils and the intended thin compd. film is formed on the substrate 3. The activated gases in the nozzles in this case are sampled by respective sampling capillaries and the activities are monitored by a mass spectrometer. The flow rate of the gases and the high frequency power are controlled according to said activities, by which the correct control of the compsn. of the compd. on the substrate 3 to desired components is made possible. |
