| 摘要 |
PURPOSE:To prevent the deterioration of a photoelectric conversion element, and to improve efficiency by extending an optical path by forming a light-transmitting first layer, to which irregularities are shaped, to the surface on the side reverse to the light-receiving surface side. CONSTITUTION:A photoelectric conversion element is formed by multilayer structure constituted by a transparent conductive layer 42, a semiconductor layer 43 consisting of three layers of a P type amorphous layer 43a, an amorphous silicon layer 43b, to which an impurity is not added, and an N type amorphous layer 43c and a back electrode 44. A layer through which aimed wavelength beams are passed may be used as the transparent conductive layer 42. A conductive thin-film, particularly, a metallic thin-film, is employed as the back electrode 44, but a second light-transmitting conductive layer 44a is interposed between the back electrode 44 and the semiconductor layer 43 to improve reflectivity on the back, and a limit to the shapes of projecting sections is relaxed. An optical path can be made longer than an optical path of one reciprocation in a photoelectric conversion layer by bringing the vertical angles of the projecting sections to 90 deg. or less. |
