| 摘要 |
PURPOSE:To release a temperature change to be applied to a chip at semiconductor substrate mounting time by a method wherein the semiconductor substrate is heated, and after then the substrate is adhered by pressure on the surface of a mounting part put on with an alloying metal, and moreover being heated. CONSTITUTION:A rigid solder material Au-Si 3 is put on the mounting part 2 of a ceramic case 1, and heated by a heating device 4 for mounting at the temperrature of the degree of 450 deg.C higher than the eutectic alloying temperature. Then chips 6 are put on a hot plate 7 for preheating held at the temperature of the degree of 240 deg.C to be heated slowly. Then the chip 6 is adhered by pressure horizontally to the mounting part 2, and at the same time, swung for several times to attain mounting. |
