| 摘要 |
PURPOSE:To enable the formation of flat multilayer wirings and he selective growth of a metal silicide, etc., by selectively growing a metal such as silicon, tungsten, aluminum, etc. on the surface of an insulating film which is made to contain high density silicon by ion-implanting silicon in the required region of the insulating film formed on the surface of a silicon substrate. CONSTITUTION:The surface of a silicon substrate 21 is coated with, e.g., a silicon dioxide film as an insulating film 22 and polysilicon 23 is formed at a required position. The required region of the insulating film is etched for the first wiring of aluminum and then silicon is ion-implanted in the region. The first wiring layer 25 of aluminum is selectively grown on the insulating film by reduced pressure CVD. A protection film 26 of PSG is formed on the surface of the first wiring layer. A resist film 26 is coated and an aperture 28 is formed by etching in a wiring region on the surface of the protection film for the second wiring of aluminum and silicon is ion-implanted in all the surface. Then, the second wiring 29 of aluminum is selectively grown in the aperture 28 and PSG is coated as a protection film 30 on the surface of the second wiring. |
