| 摘要 |
PURPOSE:To avoid a film defect and reduce the deviation of film quality and film thickness and the generation of noise by a method wherein electrons in a low temperature plasma for thin film formation are held back from flowing into an electrode, especially into the holes of the electrode through which a gas is supplied, by controlling a negative DC voltage to avoid continuous generation of sparks at those hole parts. CONSTITUTION:The internal pressure of a vacuum container 11 is reduced to not higher than 30mTorr by a vacuum pump 19. Then gaseous compounds, i.e. monosilane, ammonium and nitrogen, which contain constituents of thin films, are introduced through holes 16a of an electrode 16 with flows of 10sccM, 31sccM and 80sccM respectively onto the surface of a speciment 12 and the internal pressure of the container 11 is maintained at 0.30Torr by operating a pressure control unit 21. The specimen 12 is heated and maintained at the temperature of 350 deg.C by a specimen table 13. Then a negative DC voltage of -300V is applied to the electrode 16 and, under this condition, further a high frequency power of 0.33W/cm<2> with a frequency of 40KHz is supplied to generate a low-temperature plasma. With the above-mentioned actions the generation of sparks in the holes 16a is suppressed. |
