| 摘要 |
PURPOSE:To simplify a manufacturing process while improving the accuracy of a pattern by forming low resistance regions, into which metallic atoms are diffused, at both end sections of a semiconductor layer deposited on an insulating substrate and connecting a source electrode and a drain electrode. CONSTITUTION:An amorphous Si layer 40 is deposited on an insulating substrate 10, and molded insularly. An insulating film is laminated, a metal is evaporated, and a gate insulating film 30 and a gate electrode 20 are obtained through etching. A metallic layer 100 is evaporated, the whole is thermally treated, the metallic layer 100 is removed through etching, and low resistance regions 70, 80 are formed at both end sections of the amorphous Si layer 40. A source electrode 50 and a drain electrode 60 are connected and formed to the regions 70, 80. Accordingly, a pattern having high accuracy can be shaped through a simple process, and performance is also improved.
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