发明名称 SCREENING METHOD OF SEMICONDUCTOR LASER DIODE
摘要 PURPOSE:To select a long-life semiconductor laser with excellent efficiency and high accuracy by measuring initial characteristics on the basis of the temperature characteristics of fixed optical-output driving currents using the atmospheric temperature of a semiconductor laser diode as a parameter. CONSTITUTION:A critical temperature where operating currents suddenly increase when an atmospheric temperature is elevated gradually while keeping an optical output from a semiconductor laser constant is measured as the initial characteristics of the semiconductor laser. A histogram is prepared on the basis of the critical temperature, and the mean value and reference deviation of the histogram are obtained. An element made to be contained in the distribution of a desired standard deviation is selected from the mean value of the histogram. According to the method, the long-life semiconductor laser can be selected with excellent efficiency and high accuracy.
申请公布号 JPS6049690(A) 申请公布日期 1985.03.18
申请号 JP19830156400 申请日期 1983.08.29
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 NAKANO YOSHINORI
分类号 H01L21/66;H01S5/00 主分类号 H01L21/66
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