| 摘要 |
PURPOSE:To form a gate electrode at an arbitrary position between a source and a drain with excellent reproducibility by using a silicon nitride film, a silicon oxide film or the like as a spacer while forming the source, the drain and a gate pattern. CONSTITUTION:A silicon nitride film 7 is shaped on a semiconductor substrate 1, and a source, a drain and a gate electrode are formed by a photo-resist 2. A source electrode 3 and a drain electrode 4 are formed to the silicon nitride film 7 by using a photo-resist 8 through a lift-off method. A gate electrode 6 is shaped by using a photo-resist 9 through the lift-off method. Lastly, an excessive metal is removed together with the silicon nitride film 7. |
