THE FABRICATION METHOD OF SEMICONDUCTOR

摘要

The desired part of the substrate surface of a single crystalline semiconductor is covered with an insulating layer. The part of the exposed surface of the single crystalling semiconductor and the desired part of the insulating layer are covered with a polycrystalline semiconductor layer of amorphous semiconductor layer. By irradiating the laser, the desired part of the polycrystalline semiconductor layer or amorphous semiconductor layer are formed into a single crystal. The PN junction is formed on the single crystalline semiconductor layer.