| 摘要 |
PURPOSE:To make it possible to prevent mutual interference between gates, by providing a recessed part for storing an ion responsive film at every gate. CONSTITUTION:After N type drain and source silicon layers 2, 3 are formed, a silicon oxide film 4 is formed thereon and a silicon nitride film 5 is further formed on said film 4. The silicon nitride film can be used directly or by further coating a tantalum oxide film. A negative type photoresist material is applied onto the silicon nitride film and, after prebaking, irradiated with ultraviolet rays. In this case, all of parts except the gate parts, drain and source contact parts of FET are cured by using a photomask. After the irradiation of ultraviolet rays, post-baking is performed to promote curing. The soluble photoresist on the gate parts and the contact parts is removed by washing and, thereafter, the element is dried. A high-molecular film not responsive to an ion is applied to a gate 9 by a vapor deposition method. |
