| 摘要 |
PURPOSE:To obtain multilayer wiring structure having high density by forming a second layer wiring, depositing an insulating film on the whole surface, removing a stepped section through etching by utilizing a fact that an etching rate is faster at the stepped section, burying a metal to the stepped section and bringing the second layer wiring into contact with a first layer wiring previously formed through the metal. CONSTITUTION:An SiO2 film 22 and a first layer wiring 23 consisting of polycrystalline Si brought to conductivity while being made an impurity to contain are laminated and applied on a semiconductor substrate 21. An SiO2 film 24 is formed on the whole surface, a second layer wiring 25 composed of polycrystalline Si similarly given conductivity is shaped on the film 24, and an SiO2 film 26 is applied on the whole surface containing the wiring 25. In the constitution, since the etching rate of the film 26 formed on the side surface of the wiring 25 is faster than that of the film in a flat section, only the film 26 on the side surface of the wiring 25 is removed quickly by using a mask consisting of a photo-resist film by utilizing the phenomenon. A metal 28 is buried to the side surface of the wiring 25 and brought into contact with the wiring 23 in an exposed section, and the upper section of the metal 28 is brought into contact with the wiring 25. |
