| 摘要 |
PURPOSE:To prevent a parasitic effect completely by forming a reverse conduction type contact region to the outside of a vertical type N-P-N transistor and connecting the reverse conduction type contact region to a collector region when an IC is formed in such a manner that insularly isolated two epitaxial layers are shaped on a semiconductor substrate and the transistor is formed in a first insular region and a double diffusion region in a second insular region. CONSTITUTION:Two N<+> type buried regions 26 are diffused and formed to a P type Si substrate 21, an N type layer 22 is grown on the whole surface containing the regions 26 in an epitaxial manner, and the layer 22 is each isolated into insular regions 23 and 24 containing the regions 26 by a P<+> type isolation region 25. A P<+> type collector region 27 is formed in the region 23 and a P type base region 29 is shaped on the region 27 while being surrounded by a P<+> type collector leading-out region 28, and an N<+> type base contact region 30 and a P<+> type emitter region 31 are formed to the region 29, thus forming a vertical type P-N-P transistor 32. A double diffusion region 37 consisting of a P type base region 35 and an N<+> type emitter region 36 is shaped in the region 24, an N<+> type contact region 33 is formed between the regions 23 and 24, and the region 33 is connected previously to the region 28. |
