| 摘要 |
PURPOSE:To obtain the compound thin film of a minute pattern by surrounding the vicinity of a surface of a substrate with the gas of at least one of the elements composing the compound or by arranging the element on the surface as a thin film and by converging the element ions onto the surface by a beam to cause the reaction with other elements composing the compound. CONSTITUTION:In the reaction chamber 4 comprising gas inlets 10 and 10', the substrate carrying table 6 capable of sliding horizontally by a servomotor 7 is arranged and the substrate 5 on which a thin film is to be formed is put on said table 6. Next, the In<+> ions from an ion source 1 arranged on the reaction chamber 4 are projected into the beam window 8 arranged on a barrier 9 on a surface of the reaction chamber 4 through a blanking coil 11, an electromagnetic lens 2, a deflecting coil 3 and the electromagnetic lens 2 again. At the same time, O2 gas is introduced from an inlet 10 to form an In2O3 film on the substrate 5 and it is expanded over the whole surface by sliding of the table 6. At this time, instead of the ion implantation, arranging the thin film layer including the same element on the substrate is effective. |
