发明名称 MAGNETORESISTIVE ELEMENT
摘要 PURPOSE:To contrive improvement in temperature dependency of the offset voltage generating from the resistance temperature characteristics of each detecting part by a method wherein a non-magnetic metal film of excellent heat conductivity is coated on the substrate whereon detecting parts are arranged. CONSTITUTION:A detecting part 2 is arranged on the surface of an insulative substrate 1 consisting of a non-magnetic material, and they are interconnected by a wiring 3. A non-magnetic metal film 5 is coated on the surface of the substrate 1, whereon the detecting part 2 and the wiring 3 are formed, through the intermediary of an insulative protecting film 4. Said film 5 consists of Al having high heat conductivity, and the temperature distribution inside the element can be maintained constantly by covering the element surface with the film of excellent heat conductivity, thereby enabling to remove the temperature dependency of the offset voltage.
申请公布号 JPS6047481(A) 申请公布日期 1985.03.14
申请号 JP19830154804 申请日期 1983.08.26
申请人 HITACHI SEISAKUSHO KK 发明人 SUZUKI TETSUAKI;TAMURA KATSUYOSHI;KANAI HIROMI
分类号 H01L43/08 主分类号 H01L43/08
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