| 摘要 |
PURPOSE:To enable to obtain a semiconductor laser element, whose threshold-value current is low and luminous efficiency is high, at a higher yield by a method wherein the optical waveguide region is made to coincide with the current region in a self- matching way. CONSTITUTION:A triangular diffusion source 9, whose one side face is facing a layer 8, is provided on the P type layer 8 and a substrate is constituted. A high- resistance first clad layer 2, an active layer 1 and an N type second clad layer 3 are successively laminated on the substrate. An electrode layer 12 is formed on the upper layer of the layer 3. In this semiconductor luminescent device, when impurities are diffused in the range indicated by dotted lines from the diffusion source 9, for example, conductivity is given to only the part of the layer 2, where is included in the range, and the other parts of the layer 2 remain to be high-resistance. Accordingly, in case bias voltage is impressed in the forward direction between the layer 8 and the layer 12, current flows to only the impurity diffusion region of the layer 2, particulary concentrates in the vicinity of the protruded tip part of the diffusion source 9 and only the part of the layer 1, where is opposed to the protruded tip part of the diffusion source 9, becomes a luminous region. That is, the optical waveguide region and the current region are made to mutually coincide in a self-matching way. |
