| 摘要 |
PURPOSE:To enable to fully expand the area of an anode electrode by a method wherein a dielectric layer, an anode electrode and a cathode electrode are formed in such a manner that a current will run concentrically on the narrow part located in the vicinity of the end face of a chip. CONSTITUTION:A dielectric layer 6 is formed on the P-layer located on the surface of a GaAs chip 1. This film 6 consists of a nitride film or an SiO2 film, and it is formed in beltlike shape in the center part of the chip surface in such a manner that P-layers 7 and 7' having narrow two ends will be exposed on the chip surface. An anode electrode 8 is formed on the film 6 and the layers 7 and 7' in the form of laminated structure, the center part of the chip surface is removed, and it is formed in H-shape. By the formation of the layer 6 and the electrode 8 as above, current is concentrated in the vicinity of two end parts of the chip facing each other, and as the area of the electrode 8 is sufficiently large, the electrode 8 can be connected using a wire bonding. On the other hand, a cathode 10 is formed on the other surface of the chip in the same shape as the electrode 8. Accordingly, a beam of light is effectively radiated in the two directions as shown by arrows. |
