A masterslice semiconductor device.

摘要

A layout technology of a masterslice semiconductor device is disclosed, which reduces the unused redundant transistors. In the basic cells of the masterslice semiconductor device, each of the transistors is formed to be electrically independent from others; i.e., each transistor has an individual gate electrode and occupies an individual region for the source and drain. The terminals formed in parallel to the conduction channel of a relevant transistor permits to interconnect substantially any electrodes in a basic cell array by a straight wiring line. Such straight interconnection reduces the effective number of wiring channels for constituting a unit cell, and facilitates to construct a larger scale unit cell in a basic cell array.