发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To form an IC circuit having a simple process and a stable detection logical level and allowed to secure a wide process margine. CONSTITUTION:A circuit 31 forming an FF consists of transistors (TRs) 32-35, an input signal is supplied from an input terminal 3 to the gate of an enhancement type TR32 and power supply voltage Vc as a reference voltage is inputted to the gate of a depression type TR34 to compare the potential of the input signal. A differential sense amplifier 38 amplifying voltage between terminals 36, 37 consists of TRs 39-51 and outputs an amplified result through an inverter consisting of TRs 52, 53. The logical level of the input signal is decided only by the difference in threshold voltage of the TRs 32, 34.</p>
申请公布号 JPS6046618(A) 申请公布日期 1985.03.13
申请号 JP19830154315 申请日期 1983.08.24
申请人 TOSHIBA KK;TOUSHIBA MAIKON ENGINEERING KK 发明人 MINAGAWA EISHIN;IWAHASHI HIROSHI;ASANO MASAMICHI
分类号 G11C29/00;G11C16/06;G11C17/00;G11C29/04;H01L21/8234;H01L27/088;H03K3/356;H03K19/0185 主分类号 G11C29/00
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