发明名称 Bipolar transistor having a heterojunction between base and collector.
摘要 <p>A heterojunction bipolar transistor has a heterojunction formed between a p-type base region (114) and an n-type collector region (112). The heterojunction contains a transition region which is included in a depletion layer produced when a prescribed level of voltage is impressed between the base and the collector regions. To improve DC characteristics the relationship between an energy barrier DELTA Ec in the conduction band in the transition region and the thickness Wt of the transition region is discussed.</p>
申请公布号 EP0134069(A2) 申请公布日期 1985.03.13
申请号 EP19840302952 申请日期 1984.05.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHIDA, JIRO;KURATA, MAMORU
分类号 H01L29/73;H01L21/331;H01L29/205;H01L29/72;H01L29/737;(IPC1-7):H01L29/205 主分类号 H01L29/73
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