| 摘要 |
PURPOSE:To enhance resistivity and photoconductivity of an a-Si film, to reduce its strain, and to obtain superior high-speed film forming performance by adding CO2+N2 to raise decomposition efficiency of CO2 in decomposing silane and forming the a-Si film on a substrate. CONSTITUTION:When an a-Si film is formed on a substrate by decomposing silane or SiF4, CO2+N2 are added to elevate decomposition efficiency of CO2 through conversion action of N2 excitation energy into CO2 excitation energy, and an a-Si:C:O:H film or an a-Si:C:O:F film is formed. Such effective utilization of this excitation energy facilitates incorporation of the C and O components into the a-Si film. The photosensitive film thus obtained has high resistivity and high photoconductivity, and small strain in the inside, and can be formed at high speed. |
