| 摘要 |
PURPOSE:To end development at a prescribed dissolved film thickness arrival point by detecting the ambient temperature of a processed film on a substrate successively in the development of the processed film and calculating the dissolved film thickness of resist, and controlling the development processing. CONSTITUTION:When development is indicated after the resist film on a wafer 10 is irradiated with an electron beam or light, a control circuit 1 opens a valve 2-1 to spout a developer 5-1 fed from a tank 4-1 through a pump 301 over the wafer 10 through a nozzle 7-1 and a motor 8 rotates a wafer chuck 9. The control circuit 1 measures the development temperature by a temperature sensor 11 through a temperature measuring circuit 12, and reads a dissolving speed R1 out of a memory 13 on the basis of the temperature. A similar measurement is taken a fixed time DELTAt later to calculate a dissolving speed R2. This is repeated to calculate a dissolved film thickness R by integrating RiDELTAt, and the calculated film is compared with initial film thickness R0; and the development is stopped when R=R. |
