| 摘要 |
PURPOSE:To enable to readily form a high integration and large capacity memory in which no error occurs in the discrimination of information from a memory cell by differentiating the capacity values of the first and second capacitance elements by the number of fine holes without differentiating the size of the fine holes. CONSTITUTION:A memory cell has an MISFETQ14 for a switch and a capacitance element C14, the element C14 is composed of the entire inner surfaces of two fine holes (of a polycrystalline Si layer 6) and part of the surface of a semiconductor substrate 8, a dummy cell is composed of an MISFETQD12 for a switch, a capacitance element CD12, and the element CD12 is composed of the entire inner surface of one fine hole (of the layer 6) and part of the surface of the substrate 8. Since the holes 6 are all formed in the same shape, the all fine holes can have the same capacity. Accordingly, the capacity ratio of the memory cell to the dummy cell determined by the ratio of the number of the fine holes of the same shape can be very accurate as compared with the conventional one. |
