| 摘要 |
PURPOSE:To enable to finely etch over the limit of a lithographic technique using a photoresist by utilizing as a mask or part of the mask a side oxidized portion grown laterally on the side wall of a laminated pattern to etch the first primary film. CONSTITUTION:The second film 12 and the third film 13 are etched to form a laminated pattern 15' having a hole 15 of width T1. Then, when thermally oxidizing step is performed, oxidized silicon formed by oxidizing is grown to laterally extend from the film 13, thereby forming a side oxidized portion 16 extended in the width of T2 from the film 13 along the side of the pattern 15'. Then, with the portion 16 and the remaining pattern 15' as masks the first film 11 made of nitrided silicon is etched by extremely fast anisotropic etching in perpendicular direction to a wafer, and the remaining portion of the pattern 15' is exfoliated. The first film 11 is etched in width of t3 by the abovementioned method. |
