| 摘要 |
PURPOSE:To enhance dosage and to improve the yield of an MIS type semiconductor device by performing an ion implantation through an oxidized film on the surface of a semiconductor substrate, then removing the film and forming a new oxidized film. CONSTITUTION:A field oxidized film 2 is formed on an Si semiconductor substrate 1, an oxidized film 3 is formed on an active region 101, and arsenic ions are implanted to form an N type impurity doped layer 5 on a capacity region 102. After a resist pattern 4 and the film 3 are removed, an oxidized film 6 is formed. The first polysilicon layer 7 is accumulated on the entire surface, an impurity such as phosphorus is diffused in high density. With the layer 7 as a mask the unnecessary portion of the film 6 is etched. A gate Si oxidized film 8 and an Si oxidized film 8' are simultaneously formed, the second polycrystalline layer 9 is accumulated on the entire surface, then patterned, and a transfer gate electrode is formed. Arsenic ions are implanted to the entire surface, and an N<+> type diffused layer 10 is formed. |
