发明名称 |
DENSE DYNAMIC MEMORY CELL STRUCTURE AND PROCESS |
摘要 |
<p>Dense Dynamic Memory Cell Structure and Process A dynamic memory is provided having a cell with an improved structure and made by an improved process which substantially reduces the capacitance of the bit/sense line connected to the cell. The cell has one field effect transistor and a storage node, and the cell structure includes a thick insulating segment located under a portion of a conductive layer or field shield and under a portion of the gate electrode of the transistor, while extending over the entire diffusion region of the bit/sense line and over substantially the entire depletion region surrounding the bit/sense line diffusion region.</p> |
申请公布号 |
CA1183954(A) |
申请公布日期 |
1985.03.12 |
申请号 |
CA19820403562 |
申请日期 |
1982.05.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KENNEY, DONALD M. |
分类号 |
H01L27/10;H01L21/762;H01L21/8242;H01L23/535;H01L27/108;H01L29/78;(IPC1-7):G11C11/34 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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