| 摘要 |
PURPOSE:To form an overhanging section in the submicron order and to enhance sensitivity and resolution by irradiating an LMR oligomer film with far UV rays and developing it with a solvent contg. cyclohexanone. CONSTITUTION:A novolak resin naphthoquinone-1,2-diazido-5-sulfonate (LMR), i.e., a kind of quinonediazide ester is used for coating a substrate to form a resist film R. The substrate is treated at 60 deg.C for 30min, exposed to 180-300nm far UV rays emitted from an Xe-Hg lamp through a mask in contact with it, and the film R is developed in a solvent contg. cyclohexanone for 20sec to form a pattern, resulting in attaining a resolution enough to resolve 0.5mum line and space. The section of the resist film forming the resist pattern thus obtained has an overhanging form. |
