| 摘要 |
PURPOSE:To enable to form fine wiring patterns of Al and the like with good accuracy and in cleanness by a method wherein impurities are doped to the surface of a thin film formed of a selected material by ion implantation and wet- etched, resulting in the formation of a required pattern, and thereafter heat treatment is performed. CONSTITUTION:The thin film made of a selected material is formed on a structure, and an impurity is doped to its surface by ion implantation and wet-etched, resulting in the formation of a required pattern, thereafter heat treatment is performed. For example, Al is formed to a fixed film thickness by the known thin film formation method, ions of As, B, or the like is implanted to this Al film by the known ion implantation. Next, a resist is applied over the entire surface and patterned to a required shape, and the required wiring pattern is formed by wet- etching of the Al film, thereafter 20-min heat treatment is performed at 430 deg.C in nitrogen atmosphere and 20-min heat treatment in hydrogen atmosphere. |
