发明名称 SEMICONDUCTOR WAFER AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent the manufacturing process of a semiconductor wafer from generation of a trouble even when identification marks are carved to the wafer according to a laser beam by a method wherein a chipped surface is formed at the peripheral edge part of the main surface on one side of the thin plate type main body of the wafer. CONSTITUTION:The main body 1 of a wafer is cut out from an ingot formed with an orientation flat according to slicing at first. Then an adjoining part to the orientation flat 2 of the main surface 3a on one side of the main body 1 thereof is chipped in a belt type according to a grinding process to form an inclined surface 4, and identification marks 5 are carved to the inclined surface thereof according to irradiation by a laser beam. As a result, swollen parts are generated in the neighborhood of the identification marks 5, and molten and formed splashes are adhered to the main surface 3a according to the laser beam in some cases. When the main surfaces 3a, 3b are planished according to a lapping process and a polishing process after the identification marks 5 are carved, the swollen parts are made to the same level with the main surface 3a according to planishing thereof, the splashes are removed completely, and no trouble is generated at the manufacturing process of the semiconductor wafer.
申请公布号 JPS6045011(A) 申请公布日期 1985.03.11
申请号 JP19830152437 申请日期 1983.08.23
申请人 TOSHIBA KK 发明人 SUZUKI NOBUSHI
分类号 H01L21/00;H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/00
代理机构 代理人
主权项
地址