| 摘要 |
PURPOSE:To obtain a semiconductor crystal thin film of high quality according to the zone melting technic by a method wherein the distance between the surface of a linear heater to face to a sample and the sample is made as to be reduced in proportion to the distance toward the scanning direction of the heater. CONSTITUTION:A linear heater 23 longer than a sample 22 consisting of a high melting point metal such as carbon, SiC or tungsten, etc. is arranged closely at the top of the sample 22 put on a heating base 21 set up as to hold the sample 22 at the prescribed temperature. The heater 23 is transferred to the longitudinal direction and the direction to meet at right angles with the opposite direction thereof according to a motor, etc. Moreover the heater 23 and the heating base 21 are heated respectively according to independent electric power sources. The section of the linear heater is not a rectangle, but a trapezoid, and the distance between the sample surface is enlarged toward the rear from the scanning direction side. The sample 22 is formed by adhering an SiO2 film 32 as an insulating film on an Si substrate, and by adhering a polycrystalline Si thin film 33 on the SiO2 film 32 thereof, or by providing an opening 32a at a part of the SiO2 film 32, and by making a part of the polycrystalline Si film 33 to come in contact with the Si substrate, etc. |
