| 摘要 |
PURPOSE:To realize a low pinch-off voltage by a method wherein a channel region of the second conductivity type is divided by the inclined diffused fronts of two adjacent diffused regions of the first conductivity type. CONSTITUTION:The channel region 8 is formed between a p type substrate 1 and the two adjacent p<+> diffuse regions 11 and 12. The diffused regions 11 and 12 are diffused side by side in a cross-section perpendicular to the direction of passage from the source region 6 to the drain region 7 at the same time with the formation of a p<+> isolation region 4, and the diffused fronts are superposed to each other in a partial area 13. The cross-section of the channel region 8 is easily controlled because of being determined only by the fronts of the p<+> regions 11 and 12, and accordingly an narrow channel width can be obtained. When a source electrode S is connected to the substrate 1, and a positive voltage is impressed on a gate electrode D, pinch-off occurs at a low voltage. |
