| 摘要 |
PURPOSE:To obtain the titled device having a enlarged region for the temperature of stable single wavelength oscillation not controlled by the change in temperature by a method wherein the reflection region of a light emitting device having diffraction lattice is provided with a reverse bias impressing electrode electricall isolated from a driving electrode provided in the light emitting region and used for enlargement of a depletion layer in an optical guide. CONSTITUTION:By the application of a positive voltage between the P-side electrode 6 and the N-side electrode 7, and a negative voltage between the reverse bias electrode 9 and the N-side electrode 7, carriers are injected to the light emitting region A of an active layer 2, and then light emission is obtained by recombination. This light is guided to the reflection region B by the active layer 2 and the optical wave guide layer 3. At this time, the deplection layer expands from the inter-face between the layer 2 and the layer 3 toward the layer 2, because of the application of the reverse bias voltage between the electrodes 9 and 7, and the refractive index in this reflection region B can be controlled by variation in reverse bias voltage value. Therefore, even when the oscillation wavelength largely varies by changes in temperature, the effective refractive index can be adjusted at a desired value. |
