| 摘要 |
PURPOSE:To increase the rate of operation of an ion implantation device by using two series of ion production sources for forming a diffusion layer by pouring impurities into a sample after ionizing impurity atoms in plasma, and driving one of the ion production sources through switching operation. CONSTITUTION:Two series of ion production sources 21 and 22 are installed in a chamber 23. They are connected to an isolation electromagnet 24. An impurity gas supply system is constituted of a gas box 25 and a gas supply conduit 26. Impurity gas is introduced into the production sources 21 and 22 by performing switching control by means of valves (V1) and (V2) installed in the conduit 26. In the same manner, a power supply system works to supply electric power from an ion source power supply 27 to the ion source to be used, and works to supply degassing electric power to the ion source to be stopped by means of a changeover switch interlocked with it. Two series of ion sources are formed by opening and closing the production sources 21 and 22 by means of a rotatable magnet 28 interlocked with the production sources 21 and 22. By the means mentioned above, the rate of operation of the ion implantation device is increased, thereby facilitating its maintenance. |
