| 摘要 |
PURPOSE:To perform stable, highly accurate detection, by projecting a light element, which does not damage position aligning mark, as an eutectic alloy component of an ion source, and detecting the position. CONSTITUTION:As an ion source 11, e.g., an eutectic alloy of Au, Be, and Si is used. Au ions, Be ions, and Si ions are extracted out of said eutectic alloy ion source. The Au ions, Be ions, or Si ions 17, which are separated by a mass spectrograph 13 are projected on a sample 16 in correspondence with the request. As the sample 16, a material, in which an aligning mark is directly etched on an Si wafer, is used. As a light element for detecting the position of the aligning mark, Be, which hardly damages Si, is used. Meanwhile, the Au and Si ions are used for ion implantation, etching, and lithography. In this method, the position can be detected readily and highly accurately with almost no damage of the aligning mark. |
