| 摘要 |
PURPOSE:To obtain a pattern high in resolution through exposure to ionization radiation, such as electron beams and X-rays, and superior in dry etching resistance by using an oligomer contg. phenyl or naphthyl groups as monomer units for a resist material. CONSTITUTION:A novolak resin naphthoquinone-1,2-diazido-5-sulfonate (LMR) is used for a resist material and it is a kind of oligomer contg. phenyl or naphthyl groups as monomer units. Low polymn. degree enhances resolution. The esterification degree is 50% of the OH groups of the novolak resin. A substrate is coated with said LMR to form a resist film, and after prebaking, it is patterned with electron beams in a dose of 20muC/cm<2> at 20kV. A negative type resist pattern having a space of 170nm by heat treating it at 100 deg.C for 30min, and then developing it. |
