| 摘要 |
PURPOSE:To prevent the generation of a resist thin film on the aperture part of the titled semiconductor device by a method wherein, after a rubber negative resist has been developed using a petroleum low boiling point fraction, said resist is washed by an acetate-N-butyl solution and an isopropyl alcohol solution. CONSTITUTION:After the prescribed pattern has been exposed on the surface of a semiconductor wafer whereon rubber negative resist is coated in the prescribed thickness, the resist is developed using a petroleum low boiling point fraction. The resist on the part where no exposure is performed is removed, and the semiconductor wafer surface is masked into the prescribed pattern. Then, the developing is stopped by cleaning the above using an acetate-n-butyl solution, and subsequently, it is cleaned by isopropyl alcohol solution. As a result, the resist thin film generated when the semiconductor wafer surface is washed by an acetate-n-butyl solution starts shrinking in the washing by isopropyl alcohol solution and disappears. |
