| 摘要 |
PURPOSE:To contrive fine formation of a pattern on the film to be etched by a method wherein a triple-layer film consisting of an organic film, an intermediate film and a sensitive resist film is formed on the surface of the film to be etched, and the material and film thickness with which the intermediate film can be removed by etching when an etching is performed on the film to be etched are properly selected for the intermediate film. CONSTITUTION:An organic film 3 is formed on the surface of the film 2 to be etched, and then an intermediate film 4 is formed on the surface. Pertaining to the intermediate film 4, such as a material which can be removed by etching when an etching is performed on the film 2 to be etched is to be selected, and as for the thickness of the film, it is to be thinner than that of the film 2 to be etched. Then, a sensitive resist film 5 is formed, and a resist film 5a to be used for etching mask is formed. An anisotropic etching is performed on the intermediate film 4, and an intermediate film 4a is left under the resist film 5a. An organic film 3a is left in the same manner as above, an anisotropic etching is performed on the film 2 to be etched, and a film 2a to be etched, and a film 2a to be etched is left under the organic film 3a. The intermediate film 4a is removed by etching, and lastly, the organic film 3a is removed by etching. |
