| 摘要 |
An improvement to the process of passivation of polycrystalline silicon using a broad beam ion source wherein a controlled flow, greater in volume than the background level, of a low molecular weight hydrocarbon vapor is introduced into the vacuum system of the Kaufman-type ion source used for passivation. The amount of hydrocarbon introduced is between about one third of one percent and about ten percent, relative to the hydrogen flow, depending on the hydrocarbon. The process is especially advantageous in producing a passivated layer that functions adequately as a mask for metal plating. |
