| 摘要 |
PURPOSE:To enable to perform a film formation using a plasmic vapor-phase growing method on a P or N type semiconductor layer and also using a method wherein no plasma is used on an I-type semiconductor layer by a method wherein each semiconductor layer is formed by the vapor-phase reactive chamber suited for the semiconductor layer to be formed. CONSTITUTION:Systems I , II and III have three reaction chambers 6, 7 and 8, the systems have isolated parts 44, 45, 46 and 47 between said reaction chambers, and also they have feeding hoods 17, 18 and 19 as introducing means of reactive gas and exhaust hoods 17', 18' and 19' as exhaust means of reactive gas which are provided independently. For example, a substrate and a holder are moved from a preparatory chamber 5 to a reactive chamber, a gate valve 44 is closed, and when a P type semiconductor layer is going to be formed on the first reaction chamber 6 of the system I using a PCV method, a reactive product is formed on the substrate in the form of a film by having a plasmic reaction between a negative electrode 61 and a positive electrode 51 by adding high frequency energy 14. Besides, said substrate is moved to the second reaction chamber 7, and an I-type semiconductor layer is formed by generating a non-plasmic reaction. |
