发明名称 THIN FILM FORMING DEVICE
摘要 PURPOSE:To enable selective film forming and patterning with accuracy of approx. 1 Angstrom order by jetting out objective substances through a gap existing in zeolite and the like, while supporting a substrate with a piezoelectric body, and utilizing piezoelectric effect thereof to control the substrate for image- drawing. CONSTITUTION:A jet device 9 for filmed substances is composed of zeolite, mordenite, and gmelinite, into which a great amount of liquid metal is absorbed when the pressure (p) is raised, and the above metal is separated out when the pressure (p) is reduced. The similar effect is also obtained by change in temperature. Accordingly, if liquid metal is accomodated in the device at a preset temperature, sealed and caused to approach a substrate 8, and heated using a heater 10 after releasing one end of the seal, metal eliminated from an opened end is caused to adhere and grow on the substrate 8. On the other hand, piezoelectric bodies 7a and 7b, both of which are continuously displaced by varying applied voltage thereof are used as supporting devices on the sides of the substrate 8 and the jet device 9 respectively to control patterning for grown metal on the substrate 8.
申请公布号 JPS6043816(A) 申请公布日期 1985.03.08
申请号 JP19830151938 申请日期 1983.08.20
申请人 MITSUBISHI DENKI KK 发明人 NARA SHIGETOSHI
分类号 H01L21/28;H01L21/203;H01L21/31 主分类号 H01L21/28
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