| 摘要 |
PURPOSE:To obtain the transistor hard and having a high emitter-base withstand voltage by a method wherein, in forming the emitter region of an N-P-N bi-polar transistor, an insulation layer containing phosphorus is provided as a surface protection film, and apertures are bored, from which As is then diffused into the emitter region. CONSTITUTION:An N<+> type buried collector region 2 is diffusion-formed in the surface layer part of a P type semiconductor substrate 1, an N<-> type collector layer 3 being epitaxially grown over the entire surface including the region, and the layer 3 being then changed into island form by means of an insulation isolation SiO2 film 8 going into the region 2. Next, an N<+> type collector electrode lead-out region 4 is diffusion-formed in th layer 3, and a P-base region 5 is also diffusion-formed, and the entire surface is covered with an SiO2 film 8a. Thereafter, only the surface of the film 8a is changed into PSG film 9 by phosphorus diffusion to the film 8a, the apertures being bored by corresponding to the regions 4 and 5, and a shallow N<+> type emitter region 6 are then formed in the region 5 by As diffusion. Afterwards, electrode wiring 10 for the collector, base emitter, respectively, by being positioned in the apertures in usual manner. |
