| 摘要 |
PURPOSE:To control epitaxial growth by providing, other than shutters arranged closely in front of an evaporation source and inside of a cooling jacket surrounding the source, another shutter placed as closely as possible to a substrate so far as it does not disturb deposition of the molecular beams from the other evaporation source, and by using properly the both shutters. CONSTITUTION:A first shutter S1 is provided in direct front of, at a distance of about 5mm. from each aperture 0' of evaporation sources 1 and 2 surrounded by cooling jackets 8 and 9, respectively, and a second shutter S2 is further provided at a distance of 70mm. apart from each aperture 0'. The aperture 0' is spaced by 120mm. from a substrate 7. The second shutter S2 has such a dimension that it does not resist the passage of molecular beams irradiated from the adjacent evaporation source to the substrate, and is placed at as large a distance as possibe. According to this constitution, the first shutter is closed while the molecular beams are strong enough to cause overshoot, and second shutter is opened only after they reach the steady state, whereby a steady intensity of molecular beams can be obtained from the first stage of the operation to enable very desirable control of a thickness of an epitaxial film and of its composition due to the molecular beam intensity ratio. |
