| 摘要 |
PURPOSE:To obtain the second layer wiring having no step disconnections by a method wherein, when the second layer wiring is connected to the first layer metallic wiring by the use of an aperture provided in the inter-layer insulation film, the other metallic layer is buried in the aperture, and the second layer wiring is adhered via it. CONSTITUTION:An SiO2 film 2 is adhered to the surface of a semiconductor substrate 1, the first layer metallic wiring 3 of a required form being formed thereon, and the entire surface including it being then covered with the interlayer insulation film 4. Next, it is coated with a photo resist film 9, the aperture being bored by corresponding to the metallic wiring 3, and the other metallic layer 10 being then adhered over the entire surface while filling the aperture. Thereafter, the resist film 9 is removed along with the metallic layer 10 adhered thereon, and thus the layer 10 is left only in the aperture as layers 11 and 11'. The second layer metallic wiring 12 is adhered over the entire surface, while being made to abut against these left layers 11 and 11' contacting the metallic wiring 3. Thus, the layers 11 and 11' for connection are interposed between the wirings 3 and 12, resulting in the elimination of the step disconnection of the wiring 12. |
