| 摘要 |
PURPOSE:To deposit a-Si on a substrate at a low temperature by decomposing higher-order silane of SinH2n+2 (n>=2) by irradiation of light having wavelengths of about 253.7nm. CONSTITUTION:Higher-order silane such as disilane is irradiated with light having wavelengths of about 253.7nm from a low-pressure mercurry lamp. The larger the output of the light source is, the more the growing speed increases. But an output of 10<2>-10<3>w and an illuminance of 0.1-100mw/cm<2> will be sufficient. A decomposition pressure is not speciefied and a formation temperature is preferably 200-500 deg.C. When the temperature exceeds 500 deg.C, it becoms difficult for H2 to be taken into the a-Si film. According to this constitution, conventional monosilane is substituted by higher-order silane so that an a-Si film can be fromed even at a relatively low temperature of less than 300 deg.C, the temperature corresponding to the thermal decomposition temperature of the higher-order silane, without any use of a troublesome Hg catalyzer. |
