| 摘要 |
PURPOSE:To obtain a variable phase shifter circuit comprising a GaAs monolithic IC by forming an FET circuit which serves equivalently as a resistor and a capacitor on a GaAs substrate and changing the gate voltage of the FET serving as the resistor. CONSTITUTION:A differential amplifier is constituted of FETs 1-4, a terminal (a) is connected to a gate (c) of an output FET via the FET6 serving equivalently as the resistor and a terminal (b) is connected thereto via the FETs 7, 8 serving equivalently as the capacitors to constitute a phase shifter circuit equivalently comprising the resistor and the capacitors. A control voltage Vcont is applied to a gate of the FET6 serving equivalently as the resistor to control the resistance value. Since the FET circuit is constituted on the GaAs substrate, the phase shifter circuit comprising a monolithic IC circuit possible for the use in the microwave millimeter wave band is realized. |
