发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A semiconductor device is manufactured by selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing the conductive layer. Then, a layer of an inorganic conductive material having a melting point lower than the material comprising the conductive layer is formed on a surface of the insulating film and is melted to fill the contact hole with the inorganic conductive material. Finally a wiring layer is formed in contact with the inorganic conductive material filled in the contact hole.
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申请公布号 |
US4502210(A) |
申请公布日期 |
1985.03.05 |
申请号 |
US19830502265 |
申请日期 |
1983.06.08 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
OKUMURA, KATSUYA;SHINKI, TOSHINORI;SATO, TAKASHI;UEDA, MASAAKI |
分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L23/48;H01L23/50 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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